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New Product
SUD50P04-13L
Vishay Siliconix
P-Channel 40-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
VDS (V) - 40 rDS(on) () 0.013 at VGS = - 10 V 0.022 at VGS = - 4.5 V ID (A) - 60a - 48
FEATURES
* TrenchFET(R) Power MOSFET * 175 C Junction Temperature
RoHS
COMPLIANT
S
TO-252
G
Drain Connected to Tab G D S
D P-Channel MOSFET
Top View Ordering Information: SUD50P04-13L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy, Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 100 C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit - 40 20 - 60c - 43 - 100 - 60c - 40 80 93.7b 3a - 55 to 175 mJ W C Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta t 10 sec Steady State Symbol RthJA Typical 15 40 1.3 Maximum 18 50 1.8 Unit C/W
RthJC Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A.
Document Number: 73009 S-71660-Rev. B, 06-Aug-07
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New Product
SUD50P04-13L
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge
c
Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf ISM
a
Test Conditions VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 40 V, VGS = 0 V VDS = - 40 V, VGS = 0 V, TJ = 125 C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 30 A VGS = - 10 V, ID = - 30 A, TJ = 125 C VGS = - 4.5 V, ID = - 20 A VDS = - 15 V, ID = - 30 A
Min - 40 - 1.0
Typ
Max
Unit
- 3.0 100 -1 - 50
V nA A A
- 50 0.0105 0.017 15 0.013 0.020 0.022
S
3120 VDS = - 25 V, VGS = 0 V, f = 1 MHz f = 1 MHz VDS = - 20 V, VGS = - 10 V, ID = - 50 A 440 320 4.3 63 13 16 15 VDD = - 20 V, RL = 0.4 ID - 50 A, VGEN = - 10 V, Rg = 2.5 18 60 47 25 30 90 70 - 100 IF = - 50 A, VGS = 0 V IF = - 50 A, di/dT = 100 A/s - 1.0 36 - 1.5 55 V ns ns 95 nC pF
Gate-Source Chargec Gate-Drain Charge Timec
c
Turn-On Delay Timec Rise Turn-Off Delay Timec Fall Timec Drain-Source Body Diode Characteristics Pulse Current Forward Voltage
VSD trr
Source-Drain Reverse Recovery Time
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 73009 S-71660-Rev. B, 06-Aug-07
New Product
SUD50P04-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C unless noted
100 VGS = 10 thru 5 V 80 ID - Drain Current (A) I D - Drain Current (A) 80 100
60 4V 40
60
40 TC = 125 C 20 25 C - 55 C 0 0.0
20 2V 0 0 2 4 6 8 10 3V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
80 TC = - 55 C 70 g fs - Transconductance (S) r DS(on) - On-Resistance () 0.04 60 50 25 C 40 125 C 30 20 10 0 0 10 20 30 40 50 0.00 0 20 0.05
Transfer Characteristics
0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01
40
60
80
100
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transconductance
5000 4500 4000 C - Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 0 8 16 24 32 40 Crss 0 0 8 Coss Ciss V GS - Gate-to-Source Voltage (V) 8 10
On-Resistance vs. Drain Current
VDS = 20 V ID = 50 A
6
4
2
16
24
32
40
48
56
64
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance Document Number: 73009 S-71660-Rev. B, 06-Aug-07
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New Product
SUD50P04-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C unless noted
1.8 VGS = 10 V ID = 30 A I S - Source Current (A) TJ = 150 C TJ = 25 C 10 100
1.6 rDS(on) - On-Resistance (Normalized)
1.4
1.2
1.0
0.8
0.6 - 50
1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
200 Limited by rDS(on) 100 10 s 100 s I D - Drain Current (A)
THERMAL RATINGS
75
60 I D - Drain Current (A)
45 Limited By Package 30
10 1 ms 10 ms 1 TC = 25 C Single Pulse 100 ms DC
15
0 0 25 50 75 100 125 150 175
0.1 0.1 1 10 100
TC - Case Temperature (C)
Maximum Avalanche Drain Current vs. Case Temperature
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
2 1
Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02 Single Pulse
0.01
10- 4 10- 3 10- 2 10- 1 1 10 100 1K Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73009 S-71660-Rev. B, 06-Aug-07
SUD50P04-13L
Vishay Siliconix
THERMAL RATINGS
2 1
Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1
0.1
0.02 0.05 Single Pulse
0.01
10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 1 00
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73009
Document Number: 73009 S-71660-Rev. B, 06-Aug-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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